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GeneSiC Semiconductor G3R30MT12J
SIC MOSFET N-CH 96A TO263-7
Manufacturer # :G3R30MT12J
Manufacturer :GeneSiC Semiconductor
Dasenic # :G3R30MT12J-DS
Datasheet :
G3R30MT12J Datasheet
G3R30MT12J DatasheetCustomer # :
Description : SIC MOSFET N-CH 96A TO263-7
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 18.1800 | $ 18.18 |
| 5+ | $ 15.5700 | $ 77.85 |
| 10+ | $ 15.5700 | $ 155.7 |
| 50+ | $ 14.2200 | $ 711 |
| 100+ | $ 13.6800 | $ 1368 |
In Stock: 3900
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 18.18
Total :$ 18.18
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Payment :
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G3R30MT12J information
GeneSiC Semiconductor G3R30MT12J technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- Technology:SiCFET (Silicon Carbide)
- Supplier Device Package:TO-263-7
- Power Dissipation ( Max):459W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):1200 V
- Current - Continuous Drain ( Id) @ 25° C:96A (Tc)
- Rds On ( Max) @ Id, Vgs:36mOhm @ 50A, 15V
- Vgs(th) ( Max) @ Id:2.69V @ 12mA
- Gate Charge ( Qg) ( Max) @ Vgs:155 nC @ 15 V
- Input Capacitance ( Ciss) ( Max) @ Vds:3901 pF @ 800 V
- Drive Voltage ( Max Rds On, Min Rds On):15V
- Vgs ( Max):±15V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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