Name: G3R20MT12N
Brand: GeneSiC Semiconductor
SKU: DS-6132380
Price: 39.141 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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GeneSiC Semiconductor G3R20MT12N

SIC MOSFET N-CH 105A SOT227

Manufacturer # :G3R20MT12N

Manufacturer :GeneSiC Semiconductor

Dasenic # :G3R20MT12N-DS

Datasheet :

G3R20MT12N Datasheet

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Description : SIC MOSFET N-CH 105A SOT227

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Quantity	Unit Price	Total
10+	$ 39.1410	$ 391.41
250+	$ 38.6820	$ 9670.5

In Stock: 3780

MOQ :1 PCS

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Unit Price :$ 39.141

Total :$ 39.14

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G3R20MT12N information

GeneSiC Semiconductor G3R20MT12N technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SOT-227-4, miniBLOC
Technology:SiCFET (Silicon Carbide)
Supplier Device Package:SOT-227
Power Dissipation ( Max):365W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):1200 V
Current - Continuous Drain ( Id) @ 25° C:105A (Tc)
Rds On ( Max) @ Id, Vgs:24mOhm @ 60A, 15V
Vgs(th) ( Max) @ Id:2.69V @ 15mA
Gate Charge ( Qg) ( Max) @ Vgs:219 nC @ 15 V
Input Capacitance ( Ciss) ( Max) @ Vds:5873 pF @ 800 V
Drive Voltage ( Max Rds On, Min Rds On):15V
Vgs ( Max):+20V, -10V
EU RoHS Status:RoHS Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
US ECCN:EAR99
HTS US:8541.29.0095
REACH Status:REACH is not affected
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for GeneSiC Semiconductor G3R20MT12N
Datasheet:
G3R20MT12N,

GeneSiC Semiconductor G3R20MT12N Environmental and export classification status description

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G3R20MT12N provided by GeneSiC Semiconductor

GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry. In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.