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GeneSiC Semiconductor G3R20MT12K
SIC MOSFET N-CH 128A TO247-4
Manufacturer # :G3R20MT12K
Manufacturer :GeneSiC Semiconductor
Dasenic # :G3R20MT12K-DS
Datasheet :
G3R20MT12K Datasheet
G3R20MT12K DatasheetCustomer # :
Description : SIC MOSFET N-CH 128A TO247-4
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 24.2190 | $ 24.22 |
| 5+ | $ 24.2190 | $ 121.1 |
| 10+ | $ 24.2190 | $ 242.19 |
| 25+ | $ 24.2190 | $ 605.48 |
| 50+ | $ 24.2190 | $ 1210.95 |
In Stock: 8520
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 24.219
Total :$ 24.22
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G3R20MT12K information
GeneSiC Semiconductor G3R20MT12K technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-4
- Technology:SiCFET (Silicon Carbide)
- Supplier Device Package:TO-247-4
- Power Dissipation ( Max):542W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):1200 V
- Current - Continuous Drain ( Id) @ 25° C:128A (Tc)
- Rds On ( Max) @ Id, Vgs:24mOhm @ 60A, 15V
- Vgs(th) ( Max) @ Id:2.69V @ 15mA
- Gate Charge ( Qg) ( Max) @ Vgs:219 nC @ 15 V
- Input Capacitance ( Ciss) ( Max) @ Vds:5873 pF @ 800 V
- Drive Voltage ( Max Rds On, Min Rds On):15V
- Vgs ( Max):±15V
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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