Name: G2R1000MT17D
Brand: GeneSiC Semiconductor
SKU: DS-6131742
Price: 3.33 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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GeneSiC Semiconductor G2R1000MT17D

SIC MOSFET N-CH 4A TO247-3

Manufacturer # :G2R1000MT17D

Manufacturer :GeneSiC Semiconductor

Dasenic # :G2R1000MT17D-DS

Datasheet :

G2R1000MT17D Datasheet

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Description : SIC MOSFET N-CH 4A TO247-3

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Quantity	Unit Price	Total
30+	$ 3.3300	$ 99.9
3000+	$ 3.2967	$ 9890.1
6000+	$ 3.2643	$ 19585.8
9000+	$ 3.2319	$ 29087.1
12000+	$ 3.1995	$ 38394

In Stock: 8404

MOQ :1 PCS

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Unit Price :$ 3.33

Total :$ 3.33

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G2R1000MT17D information

GeneSiC Semiconductor G2R1000MT17D technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Technology:SiCFET (Silicon Carbide)
Supplier Device Package:TO-247-3
Power Dissipation ( Max):53W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):1700 V
Current - Continuous Drain ( Id) @ 25° C:4A (Tc)
Rds On ( Max) @ Id, Vgs:1.2Ohm @ 2A, 20V
Vgs(th) ( Max) @ Id:4V @ 2mA
Gate Charge ( Qg) ( Max) @ Vgs:-
Input Capacitance ( Ciss) ( Max) @ Vds:139 pF @ 1000 V
Drive Voltage ( Max Rds On, Min Rds On):20V
Vgs ( Max):+20V, -5V
EU RoHS Status:RoHS Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
US ECCN:EAR99
HTS US:8541.29.0095
REACH Status:REACH is not affected
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for GeneSiC Semiconductor G2R1000MT17D
Datasheet:
G2R1000MT17D,

GeneSiC Semiconductor G2R1000MT17D Environmental and export classification status description

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G2R1000MT17D provided by GeneSiC Semiconductor

GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry. In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.