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Flip Electronics NVMFSW6D1N08HT1G
MOSFET N-CH 80V 17A/89A 5DFN
Manufacturer # :NVMFSW6D1N08HT1G
Manufacturer :Flip Electronics
Dasenic # :NVMFSW6D1N08HT1G-DS
Datasheet :
NVMFSW6D1N08HT1G Datasheet
NVMFSW6D1N08HT1G DatasheetCustomer # :
Description : MOSFET N-CH 80V 17A/89A 5DFN
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 3.3000 | $ 3.3 |
| 10+ | $ 2.2340 | $ 22.34 |
| 100+ | $ 3.3000 | $ 330 |
| 500+ | $ 1.2844 | $ 642.2 |
In Stock: 2705
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 3.3
Total :$ 3.30
Delivery :
Payment :
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NVMFSW6D1N08HT1G information
Flip Electronics NVMFSW6D1N08HT1G technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN, 5 Leads
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:5-DFN (5x6) (8-SOFL)
- Power Dissipation ( Max):3.8W (Ta), 104W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):80 V
- Current - Continuous Drain ( Id) @ 25° C:17A (Ta), 89A (Tc)
- Rds On ( Max) @ Id, Vgs:5.5mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:4V @ 120µA
- Gate Charge ( Qg) ( Max) @ Vgs:32 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2085 pF @ 40 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
NVMFSW6D1N08HT1G provided by Flip Electronics
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