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Flip Electronics NVMFS6H858NT1G
MOSFET N-CH 80V 8.4A/29A 5DFN
Manufacturer # :NVMFS6H858NT1G
Manufacturer :Flip Electronics
Dasenic # :NVMFS6H858NT1G-DS
Datasheet :
NVMFS6H858NT1G Datasheet
NVMFS6H858NT1G DatasheetCustomer # :
Description : MOSFET N-CH 80V 8.4A/29A 5DFN
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.2092 | $ 12.09 |
| 1500+ | $ 0.8061 | $ 1209.15 |
In Stock: 4500
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.2092
Total :$ 1.21
Delivery :
Payment :
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NVMFS6H858NT1G information
Flip Electronics NVMFS6H858NT1G technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN, 5 Leads
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:5-DFN (5x6) (8-SOFL)
- Power Dissipation ( Max):3.5W (Ta), 42W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):80 V
- Current - Continuous Drain ( Id) @ 25° C:8.4A (Ta), 29A (Tc)
- Rds On ( Max) @ Id, Vgs:20.7mOhm @ 5A, 10V
- Vgs(th) ( Max) @ Id:4V @ 30µA
- Gate Charge ( Qg) ( Max) @ Vgs:8.9 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:510 pF @ 40 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
NVMFS6H858NT1G provided by Flip Electronics
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