Flip Electronics NVMFS5C410NT1G technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Discontinued at Digi-Key
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN, 5 Leads
Technology:MOSFET (Metal Oxide)
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Power Dissipation ( Max):3.9W (Ta), 166W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):40 V
Current - Continuous Drain ( Id) @ 25° C:300A (Tc)
Rds On ( Max) @ Id, Vgs:0.92mOhm @ 50A, 10V
Vgs(th) ( Max) @ Id:3.5V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:86 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:6100 pF @ 25 V
Drive Voltage ( Max Rds On, Min Rds On):10V
Vgs ( Max):±20V
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
US ECCN:Provided as per user requirements
China RoHS Status:Green Symbol: Green and environmentally friendly product
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- The defect must be reported within 365 days after delivery.
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NVMFS5C410NT1G Datasheet
