Flip Electronics NVMFS5830NLWFT1G technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN, 5 Leads
Technology:MOSFET (Metal Oxide)
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Power Dissipation ( Max):3.8W (Ta), 158W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):40 V
Current - Continuous Drain ( Id) @ 25° C:29A (Ta)
Rds On ( Max) @ Id, Vgs:2.3mOhm @ 20A, 10V
Vgs(th) ( Max) @ Id:2.4V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:113 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:5880 pF @ 25 V
Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
Vgs ( Max):±20V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
For the return process:
- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
- Please refer to our After-Sale Matters for more detailed instructions.
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NVMFS5830NLWFT1G Datasheet
