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Flip Electronics NSBC123EPDXV6T1G

In Stock: 22523
MOQ: 1
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Flip Electronics NSBC123EPDXV6T1G technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Product Status:Obsolete
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Power - Max:500mW
Supplier Device Package:SOT-563
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector ( Ic) ( Max):100mA
Voltage - Collector Emitter Breakdown ( Max):50V
Vce Saturation ( Max) @ Ib, Ic:250mV @ 5mA, 10mA
Current - Collector Cutoff ( Max):500nA
D C Current Gain (h F E) ( Min) @ Ic, Vce:8 @ 5mA, 10V
Frequency - Transition:-
Resistor - Base ( R1):2.2kOhms
Resistor - Emitter Base ( R2):2.2kOhms
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.21.0095
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
NSBC123EPDXV6T1G provided by Flip Electronics

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Ratings and Reviews
Great Product

John D.

Excellent product quality and fast shipping service. Will definitely purchase again!

Good Experience

Sarah M.

Smooth transaction process and responsive customer support. Highly recommended!

Satisfied

Mike R.

Accurate product description and arrived earlier than expected.

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