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Flip Electronics NSBC123EPDXV6T1G
Manufacturer # :NSBC123EPDXV6T1G
Manufacturer :Flip Electronics
Dasenic # :NSBC123EPDXV6T1G-DS
Datasheet : NSBC123EPDXV6T1G Datasheet
Customer # :
Description : TRANS PREBIAS NPN/PNP 50V SOT563
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In Stock: 6733
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0484
Total :$ 0.05
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NSBC123EPDXV6T1G information
Flip Electronics NSBC123EPDXV6T1G technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Product Status:Obsolete
- Mounting Type:Surface Mount
- Package / Case:SOT-563, SOT-666
- Power - Max:500mW
- Supplier Device Package:SOT-563
- Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector ( Ic) ( Max):100mA
- Voltage - Collector Emitter Breakdown ( Max):50V
- Vce Saturation ( Max) @ Ib, Ic:250mV @ 5mA, 10mA
- Current - Collector Cutoff ( Max):500nA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:8 @ 5mA, 10V
- Frequency - Transition:-
- Resistor - Base ( R1):2.2kOhms
- Resistor - Emitter Base ( R2):2.2kOhms
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.21.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
NSBC123EPDXV6T1G provided by Flip Electronics
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