Flip Electronics FDS6900AS-G technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Obsolete
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Power - Max:900mW (Ta)
Supplier Device Package:8-SOIC
F E T Type:2 N-Channel (Dual)
F E T Feature:Logic Level Gate
Drain to Source Voltage ( Vdss):30V
Current - Continuous Drain ( Id) @ 25° C:6.9A, 8.2A
Rds On ( Max) @ Id, Vgs:27mOhm @ 6.9A, 10V
Vgs(th) ( Max) @ Id:3V @ 250µA, 3V @ 1mA
Gate Charge ( Qg) ( Max) @ Vgs:15nC @ 10V
Input Capacitance ( Ciss) ( Max) @ Vds:600pF @ 15V
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
US ECCN:Provided as per user requirements
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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Q: What is the return or replacement process for FDS6900AS-G?
A: Dasenic conducts Pre-Shipment Inspections (PSI) on all orders to ensure quality before shipment. Suppose there are issues such as quantity discrepancies, incorrect items, or visible defects (e.g., breakage or rust), and they are acknowledged by us. In that case, returns or replacements will be accepted under the following conditions:
- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
For the return process:
- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
- Please refer to our After-Sale Matters for more detailed instructions.
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FDS6900AS-G Datasheet
