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Flip Electronics FDS6900AS-G
Manufacturer # :FDS6900AS-G
Manufacturer :Flip Electronics
Dasenic # :FDS6900AS-G-DS
Datasheet : FDS6900AS-G Datasheet
Customer # :
Description : MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
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In Stock: 15000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0351
Total :$ 0.04
Delivery :
Payment :
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FDS6900AS-G information
Flip Electronics FDS6900AS-G technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Power - Max:900mW (Ta)
- Supplier Device Package:8-SOIC
- F E T Type:2 N-Channel (Dual)
- F E T Feature:Logic Level Gate
- Drain to Source Voltage ( Vdss):30V
- Current - Continuous Drain ( Id) @ 25° C:6.9A, 8.2A
- Rds On ( Max) @ Id, Vgs:27mOhm @ 6.9A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA, 3V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:15nC @ 10V
- Input Capacitance ( Ciss) ( Max) @ Vds:600pF @ 15V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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