Flip Electronics FDS6673BZ-G technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Power Dissipation ( Max):1W (Ta)
F E T Type:P-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):30 V
Current - Continuous Drain ( Id) @ 25° C:14.5A (Ta)
Rds On ( Max) @ Id, Vgs:7.8mOhm @ 14.5A, 10V
Vgs(th) ( Max) @ Id:3V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:65 nC @ 5 V
Input Capacitance ( Ciss) ( Max) @ Vds:4700 pF @ 15 V
Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
Vgs ( Max):±25V
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH info available upon request
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
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Q: What is the return or replacement process for FDS6673BZ-G?
A: Dasenic conducts Pre-Shipment Inspections (PSI) on all orders to ensure quality before shipment. Suppose there are issues such as quantity discrepancies, incorrect items, or visible defects (e.g., breakage or rust), and they are acknowledged by us. In that case, returns or replacements will be accepted under the following conditions:
- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
For the return process:
- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
- Please refer to our After-Sale Matters for more detailed instructions.
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FDS6673BZ-G Datasheet
