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Flip Electronics FDP038AN06A0-F102
MOSFET N-CH 60V 80A TO220-3
Manufacturer # :FDP038AN06A0-F102
Manufacturer :Flip Electronics
Dasenic # :FDP038AN06A0-F102-DS
Datasheet :
FDP038AN06A0-F102 Datasheet
FDP038AN06A0-F102 DatasheetCustomer # :
Description : MOSFET N-CH 60V 80A TO220-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.4660 | $ 2.47 |
| 25+ | $ 2.4210 | $ 60.53 |
| 100+ | $ 2.3220 | $ 232.2 |
| 500+ | $ 2.2230 | $ 1111.5 |
| 1000+ | $ 2.0970 | $ 2097 |
In Stock: 4506
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.466
Total :$ 2.47
Delivery :
Payment :
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FDP038AN06A0-F102 information
Flip Electronics FDP038AN06A0-F102 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220-3
- Power Dissipation ( Max):310W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:80A (Tc)
- Rds On ( Max) @ Id, Vgs:3.8mOhm @ 80A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:124 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:6400 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):6V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:Vendor omitted MSL Rating information
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
FDP038AN06A0-F102 provided by Flip Electronics
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