Flip Electronics FDFMA2P029Z-F106 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VDFN Exposed Pad
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-MicroFET (2x2)
Power Dissipation ( Max):1.4W (Ta)
F E T Type:P-Channel
F E T Feature:Schottky Diode (Isolated)
Drain to Source Voltage ( Vdss):20 V
Current - Continuous Drain ( Id) @ 25° C:3.1A (Ta)
Rds On ( Max) @ Id, Vgs:95mOhm @ 3.1A, 4.5V
Vgs(th) ( Max) @ Id:1.5V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:10 nC @ 4.5 V
Input Capacitance ( Ciss) ( Max) @ Vds:720 pF @ 10 V
Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
Vgs ( Max):±12V
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
For the return process:
- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
- Please refer to our After-Sale Matters for more detailed instructions.
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FDFMA2P029Z-F106 Datasheet
