Flip Electronics EMC4DXV5T1G technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Product Status:Obsolete
Mounting Type:Surface Mount
Package / Case:SOT-553
Power - Max:500mW
Supplier Device Package:SOT-553
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector ( Ic) ( Max):100mA
Voltage - Collector Emitter Breakdown ( Max):50V
Vce Saturation ( Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff ( Max):500nA
D C Current Gain (h F E) ( Min) @ Ic, Vce:80 @ 5mA, 10V
Frequency - Transition:-
Resistor - Base ( R1):47kOhms, 10kOhms
Resistor - Emitter Base ( R2):47kOhms
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.21.0095
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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Q: What is the return or replacement process for EMC4DXV5T1G?
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
For the return process:
- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
- Please refer to our After-Sale Matters for more detailed instructions.
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EMC4DXV5T1G Datasheet
