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1 : $225.7200
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EPC Space FBG20N18BC
GAN FET HEMT200V18A COTS 4FSMD-B
Manufacturer # :FBG20N18BC
Manufacturer :EPC Space
Dasenic # :FBG20N18BC-DS
Datasheet :
FBG20N18BC Datasheet
FBG20N18BC DatasheetCustomer # :
Description : GAN FET HEMT200V18A COTS 4FSMD-B
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 225.7200 | $ 225.72 |
In Stock: 1541
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 225.72
Total :$ 225.72
Delivery :
Payment :
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FBG20N18BC information
EPC Space FBG20N18BC technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:4-SMD, No Lead
- Technology:GaNFET (Gallium Nitride)
- Supplier Device Package:4-SMD
- Power Dissipation ( Max):-
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):200 V
- Current - Continuous Drain ( Id) @ 25° C:18A (Tc)
- Rds On ( Max) @ Id, Vgs:26mOhm @ 18A, 5V
- Vgs(th) ( Max) @ Id:2.5V @ 3mA
- Gate Charge ( Qg) ( Max) @ Vgs:6 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:900 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):5V
- Vgs ( Max):+6V, -4V
- MSL Rating:Vendor omitted MSL Rating information
- HTS US:0000.00.0000
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
FBG20N18BC provided by EPC Space
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