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  • EPC Space FBG10N30BC

    GAN FET HEMT100V30A COTS 4FSMD-B
  • part number has RoHS
  • Mfr.Part # :FBG10N30BC
  • Manufacturer :EPC Space
  • Dasenic # :FBG10N30BC-DS
  • Datasheet :pdf download FBG10N30BC Datasheet
  • Description : GAN FET HEMT100V30A COTS 4FSMD-B
  • Package :-
  • Quantity :
    Unit Price : $ 231.624Total : $ 231.62
  • Delivery Time :Ship Within 48 Hours
  • Shipping Origin :Shenzhen or Hong Kong Warehouse
  • Delivery :
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  • Payment :
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In Stock: 1624
( MOQ : 1 PCS )
Pricing (USD) : * All prices are in USD
QuantityUnit PriceTotal
1 +$ 231.6240$ 231.62
10 +$ 225.7200$ 2257.20

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EPC Space FBG10N30BC technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:4-SMD, No Lead
Technology:GaNFET (Gallium Nitride)
Supplier Device Package:4-SMD
Power Dissipation ( Max):-
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):100 V
Current - Continuous Drain ( Id) @ 25° C:30A (Tc)
Rds On ( Max) @ Id, Vgs:9mOhm @ 30A, 5V
Vgs(th) ( Max) @ Id:2.5V @ 5mA
Gate Charge ( Qg) ( Max) @ Vgs:11 nC @ 5 V
Input Capacitance ( Ciss) ( Max) @ Vds:1000 pF @ 50 V
Drive Voltage ( Max Rds On, Min Rds On):5V
Vgs ( Max):+6V, -4V
MSL Rating:Vendor omitted MSL Rating information
HTS US:0000.00.0000
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product

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