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EPC Space FBG10N05AC
Manufacturer # :FBG10N05AC
Manufacturer :EPC Space
Dasenic # :FBG10N05AC-DS
Datasheet : FBG10N05AC Datasheet
Customer # :
Description : GAN FET HEMT 100V5A COTS 4FSMD-A
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In Stock: 1717
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 225.72
Total :$ 225.72
Delivery :
Payment :
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FBG10N05AC information
EPC Space FBG10N05AC technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:4-SMD, No Lead
- Technology:GaNFET (Gallium Nitride)
- Supplier Device Package:4-SMD
- Power Dissipation ( Max):-
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:5A (Tc)
- Rds On ( Max) @ Id, Vgs:44mOhm @ 5A, 5V
- Vgs(th) ( Max) @ Id:2.5V @ 1.2mA
- Gate Charge ( Qg) ( Max) @ Vgs:2.2 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:233 pF @ 50 V
- Drive Voltage ( Max Rds On, Min Rds On):5V
- Vgs ( Max):+6V, -4V
- MSL Rating:Vendor omitted MSL Rating information
- HTS US:0000.00.0000
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
FBG10N05AC provided by EPC Space
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