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EPC EPC21701

IC GAN LASER DRVR 80V
part number has RoHS
Manufacturer # :EPC21701
Manufacturer :EPC
Dasenic # :EPC21701-DS
Customer # :
Description : IC GAN LASER DRVR 80V
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
1+$ 2.2050$ 2.21
10+$ 1.9773$ 19.77
25+$ 2.2050$ 55.13
100+$ 1.6198$ 161.98
250+$ 1.5368$ 384.2
In Stock: 43466
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.205
Total :$ 2.21
Delivery :
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Payment :
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EPC21701 information

  • EPC EPC21701 technical specifications, attributes, parameters.
  • Category:Integrated Circuits (ICs)/PMIC - Laser Drivers
  • Product Status:Active
  • Type:Laser Diode Driver
  • Number of Channels:1
  • Voltage - Supply:80V
  • Base Product Number:EPC21701
  • Packaging:Tape & Reel (TR)
  • Packaging:Cut Tape (CT)
  • Packaging:Dasenic-Reel®
  • EU RoHS Status:ROHS3 Compliant
  • MSL Rating:1 (Unlimited, 30°C/85%RH)
  • REACH Status:REACH Unaffected
  • US ECCN:EAR99
  • HTS US:8542.39.0001
  • China RoHS Status:Green Symbol: Green and environmentally friendly product
EPC21701 provided by EPC
Efficient Power Conversion Corporation (EPC) is a cutting-edge technology company dedicated to advancing the field of power electronics through the development and commercialization of gallium nitride (GaN)-based power devices. EPC was founded in 2007 by a team of experts in power electronics, semiconductors, and business management.Since its founding, EPC has become a recognized leader in the industry, offering a broad portfolio of off-the-shelf GaN-based power transistors and integrated circuits.Since 2009,the company's product line has expanded rapidly to include a growing family of integrated circuits, automotive qualified devices, and rad hard devices. Our products are used in a wide range of applications, from consumer electronics and automotive to renewable energy and space. Today, leading companies the world over work with EPC to enable their next-generation technologies with the power of GaN.
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