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NXP Semiconductors BAT54CW

30V Dual Common Cathode 1V@100mA 200mA SOT-323(SC-70) Schottky Barrier Diodes (SBD)
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Manufacturer # :BAT54CW
Manufacturer :NXP Semiconductors
Dasenic # :6D9D99-DS
Customer # :
Description : 30V Dual Common Cathode 1V@100mA 200mA SOT-323(SC-70) Schottky Barrier Diodes (SBD) SOT-323(SC-70)
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QuantityUnit PriceTotal
10+$ 0.032400$ 0.32
2500+$ 0.018000$ 45
2500+$ 0.018000$ 45
5885+$ 0.015300$ 90.04
5885+$ 0.015300$ 90.04
In Stock: 33573
MOQ :1 PCS
Packaging :SOT-323(SC-70)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0324
Total :$ 0.03
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BAT54CW information

Product Details
The BAT54CW is a Schottky barrier diode designed for low voltage, high-speed switching applications. This device is particularly known for its low forward voltage drop and fast switching capabilities. The BAT54CW is often used in signal processing and other applications where quick response times are paramount. Functions - Switching: The BAT54CW acts as a switch for electronic signals, allowing for rapid on/off control. - Rectification: It can be used to convert alternating current (AC) to direct current (DC). - Clamping: The diode can protect sensitive components from voltage spikes by clamping excess voltage levels. - Mixing: Typical usage in RF applications includes signal mixing, which is crucial in telecommunications. Applications - Radio Frequency (RF) Applications: Used in RF amplification circuits and mixers. - Signal Processing: Ideal for analog signal routing and protection in various electronic devices. - Mobile Devices: Used in smartphones and tablets for high-frequency switching. - Telecommunication Equipment: Integral in modems, wireless transmitters, and receivers. - Power Management: Used in DC-DC converters to enhance efficiency. Alternative Parts Some alternatives to the BAT54CW include: - 1N5817: A Schottky diode with similar specifications. - B140: Another Schottky diode suitable for similar applications. - BAT54: The same series but with different configurations or specifications that might fit specific needs better. - MBR120: A Schottky barrier rectifier for higher current applications. Embedded Modules Although the BAT54CW itself is a discrete component, it is often incorporated into various embedded systems and modules, including: - Microcontroller Boards (like Arduino or Raspberry Pi): Used for creating signal routing and logic control in various applications. - RF Modules: Deployed in RF frontend modules for communication systems. - Sensor Interface Circuits: To protect and process the signals from sensors. Related Q&A 1. Q: What is the maximum reverse voltage rating for the BAT54CW? A: The BAT54CW typically has a maximum reverse voltage rating (VR) of about 30V. 2. Q: How does the forward voltage drop of BAT54CW compare to standard diodes? A: The BAT54CW has a lower forward voltage drop (around 0.3V) compared to standard silicon diodes (approximately 0.7V), making it efficient for low voltage applications. 3. Q: Can the BAT54CW be used in battery charging applications? A: Yes, the BAT54CW can be effectively used in low-voltage battery charging circuits due to its fast switching capabilities and low forward voltage drop. 4. Q: What are the critical factors to consider when using the BAT54CW in high-frequency applications? A: Key factors include its reverse recovery time, forward current rating, and thermal management to ensure it operates effectively at the desired frequencies. 5. Q: What are the differences between BAT54CW and its alternatives like 1N5817? A: The BAT54CW is optimized for low-power, high-speed switching, whereas 1N5817 can handle higher current ratings and is more suited for power applications, making them suitable for different applications depending on the specifications required.
  • NXP Semiconductors BAT54CW technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Diode Arrays
  • Product Status:Active
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Diode Type:Schottky
  • Voltage - Forward ( Vf) ( Max) @ If:1 V @ 100 mA
  • Current - Reverse Leakage @ Vr:2 µA @ 25 V
  • Diode Configuration:1 Pair Common Anode
  • Voltage - D C Reverse ( Vr) ( Max):30 V
  • Current - Average Rectified ( Io) (per Diode):100mA
  • Reverse Recovery Time (trr):5 ns
  • Operating Temperature - Junction:125°C (Max)
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