Central Semiconductor CTLDM303N-M832DS TR technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Obsolete
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-TDFN Exposed Pad
Power - Max:1.65W
Supplier Device Package:TLM832DS
F E T Type:2 N-Channel (Dual)
F E T Feature:Standard
Drain to Source Voltage ( Vdss):30V
Current - Continuous Drain ( Id) @ 25° C:3.6A
Rds On ( Max) @ Id, Vgs:40mOhm @ 1.8A, 4.5V
Vgs(th) ( Max) @ Id:1.2V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:13nC @ 4.5V
Input Capacitance ( Ciss) ( Max) @ Vds:590pF @ 10V
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
EU RoHS Status:RoHS Compliant
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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CTLDM303N-M832DS TR Datasheet
