Central Semiconductor CP775-CWDM3011P-CT technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Obsolete
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Technology:MOSFET (Metal Oxide)
Supplier Device Package:Die
Power Dissipation ( Max):-
F E T Type:P-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):30 V
Current - Continuous Drain ( Id) @ 25° C:11A (Ta)
Rds On ( Max) @ Id, Vgs:20mOhm @ 11A, 10V
Vgs(th) ( Max) @ Id:3V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:80 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:3100 pF @ 8 V
Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
Vgs ( Max):±20V
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:OBSOLETE
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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CP775-CWDM3011P-CT Datasheet
