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Central Semiconductor CP647-MJ11015-CTJ28
TRANS PNP DARL 120V 30A DIE
Manufacturer # :CP647-MJ11015-CTJ28
Manufacturer :Central Semiconductor
Dasenic # :CP647-MJ11015-CTJ28-DS
Datasheet :
CP647-MJ11015-CTJ28 Datasheet
CP647-MJ11015-CTJ28 DatasheetCustomer # :
Description : TRANS PNP DARL 120V 30A DIE
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| Quantity | Unit Price | Total |
In Stock: 43
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price :$ 0
Total :$ 0.00
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CP647-MJ11015-CTJ28 information
Central Semiconductor CP647-MJ11015-CTJ28 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Single
- Product Status:Obsolete
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:Die
- Power - Max:-
- Supplier Device Package:Die
- Transistor Type:PNP - Darlington
- Current - Collector ( Ic) ( Max):30 A
- Voltage - Collector Emitter Breakdown ( Max):120 V
- Vce Saturation ( Max) @ Ib, Ic:4V @ 300mA, 30A
- Current - Collector Cutoff ( Max):1mA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:200 @ 30A, 5V
- Frequency - Transition:-
- EU RoHS Status:RoHS non-compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0040
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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