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Central Semiconductor CP406-CWDM3011N-CT
MOSFET N-CH 11A 30V BARE DIE
Manufacturer # :CP406-CWDM3011N-CT
Manufacturer :Central Semiconductor
Dasenic # :CP406-CWDM3011N-CT-DS
Datasheet :
CP406-CWDM3011N-CT Datasheet
CP406-CWDM3011N-CT DatasheetCustomer # :
Description : MOSFET N-CH 11A 30V BARE DIE
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In Stock: 2351
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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CP406-CWDM3011N-CT information
Central Semiconductor CP406-CWDM3011N-CT technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:Die
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:Die
- Power Dissipation ( Max):1.15W (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:9.93A (Ta)
- Rds On ( Max) @ Id, Vgs:13mOhm @ 1A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:-
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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