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Central Semiconductor CN649 TR
DIODE GP 600V 400MA DO-41SP
Manufacturer # :CN649 TR
Manufacturer :Central Semiconductor
Dasenic # :CN649 TR-DS
Datasheet :
CN649 TR Datasheet
CN649 TR DatasheetCustomer # :
Description : DIODE GP 600V 400MA DO-41SP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 2.1271 | $ 21.27 |
| 5000+ | $ 1.1817 | $ 5908.5 |
| 10000+ | $ 1.1272 | $ 11272 |
In Stock: 1497
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.1271
Total :$ 2.13
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CN649 TR information
Central Semiconductor CN649 TR technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Obsolete
- Mounting Type:Through Hole
- Package / Case:DO-204AL, DO-41, Axial
- Supplier Device Package:DO-41
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Diode Type:Standard
- Current - Average Rectified ( Io):400mA
- Voltage - Forward ( Vf) ( Max) @ If:1 V @ 400 mA
- Current - Reverse Leakage @ Vr:200 nA @ 600 V
- Capacitance @ Vr, F:11pF @ 12V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):600 V
- Reverse Recovery Time (trr):-
- Operating Temperature - Junction:-65°C ~ 150°C
- EU RoHS Status:RoHS non-compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.10.0070
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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