Central Semiconductor CMPDM202PH TR technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Obsolete
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-3 Flat Leads
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23F
Power Dissipation ( Max):350mW (Ta)
F E T Type:P-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):20 V
Current - Continuous Drain ( Id) @ 25° C:2.3A (Ta)
Rds On ( Max) @ Id, Vgs:88mOhm @ 1.2A, 5V
Vgs(th) ( Max) @ Id:1.4V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:12 nC @ 5 V
Input Capacitance ( Ciss) ( Max) @ Vds:800 pF @ 10 V
Drive Voltage ( Max Rds On, Min Rds On):2.5V, 5V
Vgs ( Max):12V
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
US ECCN:Provided as per user requirements
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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CMPDM202PH TR Datasheet
