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Central Semiconductor CEDM8001 TR PBFREE
MOSFET P-CH 20V 100MA SOT883
Manufacturer # :CEDM8001 TR PBFREE
Manufacturer :Central Semiconductor
Dasenic # :CEDM8001 TR PBFREE-DS
Datasheet :
CEDM8001 TR PBFREE Datasheet
CEDM8001 TR PBFREE DatasheetCustomer # :
Description : MOSFET P-CH 20V 100MA SOT883
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.4860 | $ 0.49 |
| 10+ | $ 0.4113 | $ 4.11 |
| 100+ | $ 0.2853 | $ 28.53 |
| 500+ | $ 0.2223 | $ 111.15 |
| 1000+ | $ 0.1629 | $ 162.9 |
In Stock: 8400
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.486
Total :$ 0.49
Delivery :
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CEDM8001 TR PBFREE information
Central Semiconductor CEDM8001 TR PBFREE technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SC-101, SOT-883
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-883
- Power Dissipation ( Max):100mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:100mA (Ta)
- Rds On ( Max) @ Id, Vgs:8Ohm @ 10mA, 4V
- Vgs(th) ( Max) @ Id:1.1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:0.66 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:45 pF @ 3 V
- Drive Voltage ( Max Rds On, Min Rds On):1.5V, 4V
- Vgs ( Max):10V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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