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Alpha & Omega Semiconductor AOD3N80
MOSFET N-CH 800V 2.8A TO252
Manufacturer # :AOD3N80
Manufacturer :Alpha & Omega Semiconductor
Dasenic # :AOD3N80-DS
Datasheet :
AOD3N80 Datasheet
AOD3N80 DatasheetCustomer # :
Description : MOSFET N-CH 800V 2.8A TO252
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.2960 | $ 1.3 |
| 10+ | $ 1.0575 | $ 10.58 |
| 100+ | $ 0.8228 | $ 82.28 |
| 500+ | $ 0.6974 | $ 348.7 |
| 1000+ | $ 0.5681 | $ 568.1 |
In Stock: 7470
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.296
Total :$ 1.30
Delivery :
Payment :
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AOD3N80 information
Alpha & Omega Semiconductor AOD3N80 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-50°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-252 (DPAK)
- Power Dissipation ( Max):83W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):800 V
- Current - Continuous Drain ( Id) @ 25° C:2.8A (Tc)
- Rds On ( Max) @ Id, Vgs:4.8Ohm @ 1.5A, 10V
- Vgs(th) ( Max) @ Id:4.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:10 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:510 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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