Infineon Technologies BSO615CGXUMA1 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Power - Max:2W (Ta)
Supplier Device Package:PG-DSO-8
F E T Type:N and P-Channel
F E T Feature:Logic Level Gate
Drain to Source Voltage ( Vdss):60V
Current - Continuous Drain ( Id) @ 25° C:3.1A (Ta), 2A (Ta)
Rds On ( Max) @ Id, Vgs:110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
Vgs(th) ( Max) @ Id:2V @ 20µA, 2V @ 450µA
Gate Charge ( Qg) ( Max) @ Vgs:22.5nC @ 10V, 20nC @ 10V
Input Capacitance ( Ciss) ( Max) @ Vds:380pF @ 25V, 460pF @ 25V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
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BSO615CGXUMA1 Datasheet
