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Rochester Electronics IRFR210BTM
Manufacturer # :IRFR210BTM
Manufacturer :Rochester Electronics
Dasenic # :IRFR210BTM-DS
Datasheet : IRFR210BTM Datasheet
Customer # :
Description : N-CHANNEL POWER MOSFET
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In Stock: 20760
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.2048
Total :$ 0.20
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Payment :
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IRFR210BTM information
Rochester Electronics IRFR210BTM technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-252, (D-Pak)
- Power Dissipation ( Max):2.5W (Ta), 26W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):200 V
- Current - Continuous Drain ( Id) @ 25° C:2.7A (Tc)
- Rds On ( Max) @ Id, Vgs:1.5Ohm @ 1.35A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:9.3 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:225 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS non-compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
IRFR210BTM provided by Rochester Electronics
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Rochester offers a full range of manufacturing services including Design, Wafer Processing, Assembly, Test, Reliability, and IP Archiving providing single solutions through to full turnkey manufacturing, enabling faster time-to-market.
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